Analysis, modeling and simulation of flicker noise in MOS transistors

Abstract

In order to understand the causes of 1/f noise in MOS transistors physical theories descri­bing its physical origin, such as the McWhorter theory and the Hooge theory, are reviewed in this paper. Analytical 1/f noise models correlating experimental results based on a long-canal approach have been reviewed as well. Spice simulation models are also described, concluding that these models are also based on the long-canal devices theory. Therefore, it the length of the transistor as to be increased to reduce 1/f noise, it is significant to find out what other parameters are under the control of the designer, and which technique can contribute to reducing the level of spectral power of the noise. Simulation results showing the noise performance when the canal length is changed, L, and the frequency power is changed, β.